TlInS2 晶體

簡(jiǎn)要描述：The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique.

更新時(shí)間：2024-06-02
產(chǎn)品型號(hào)：
廠商性質(zhì)：生產(chǎn)廠家
訪(fǎng) 問(wèn) 量：875

產(chǎn)品咨詢(xún)聯(lián)系我們

產(chǎn)品分類(lèi)

二維材料

鈣鈦礦/OLED 異質(zhì)結(jié) MOFS材料其他二維材料二維材料溶液二維材料薄膜二維材料粉末絕緣體黑磷六方氮化硼晶體碲化物晶體硒化物晶體硫化物晶體查看全部產(chǎn)品

相關(guān)文章

詳細(xì)介紹

The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique. TlInS2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. As a result, these crystals exhibit layered structure with weak vdW coupling between the adjacent layers. In particular, TlInS2 is a direct gap semiconductor with optical band gap of 3.5 eV, it exhibits rather novel ferroelectric, ferroelastic behavior. Owing to its crystal structure it is also known to be second harmonic generation (SHG) semiconductor.

Properties of TlInS2 crystals